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Magazine Name : Ieee Transactions On Electron Devices

Year : 2002 Volume number : 49 Issue: 01

Growth Of Ultrahigh Carbon-Doped Ingaas And Its Application To Inp/Ingaas(C) Hbts (Article)
Subject: Compound Semiconductor Devices
Author: J. C Han      J Song     
page:      1 - 6
Quasi-Two-Dimensional Transmission Line Model (Qtd-Tlm) For Planar Ohmic Contact Studies (Article)
Subject: Silicon Devices
Author: E.F. Chor     
page:      105 - 111
Intrinsic Threshold Voltage Fluctuations In Decanano Mosfets Due To Local Oxide Thickness Variations (Article)
Subject: Silicon Devices
Author: A. Asenov      S. Kaya      J. H. Davies     
page:      112 - 119
Novel Phenomenon Of Avalanche Breakdown Saturation With Negative Resistance In A Bipolar Transistor (Article)
Subject: Solid-State Device Phenomena
Author: T. Unagami     
page:      120 - 124
Study Of A 50-Nm Nmosfet By Ensemble Monte Carlo Simulation Including A New Approach To Surface Roughness And Impurity Scattering In The Si Inversion Layer (Article)
Subject: Solid-State Device Phenomena
Author: D Vasileska      D.K Ferry     
page:      125 - 132
Essential Physics Of Carrier Transport In Nanoscale Mosfets (Article)
Subject: Solid-State Device Phenomena
Author: M. Lundstrom     
page:      133 - 141
Properties Of The Transient Of Avalanche Transistor Switching At Extreme Current Densities (Article)
Subject: Solid-State Device Phenomena
Author: J. T Kostamovaara     
page:      142 - 149
Preparation Of Thin-Film Transistors With Chemicla Bath Deposited Cdse And Cds Thin Films (Article)
Subject: Compound Semiconductor Devices
Author: F. Y. Gan     
page:      15 - 18
Low-Loss, High-Voltage 6h-Sic Epitaxial P-I-N Diode (Article)
Subject: Solid-State Power And High Voltage
Author: S Tamura      A Kimoto      J Matsunami     
page:      150 - 154
An Experimental Investigation On The Nature Of Reverse Current Of Silicon Power Pn-Junctions (Article)
Subject: Solid-State Power And High Voltage
Author: V. N. Obreja     
page:      155 - 163
A Monolithic Fully-Integrated Vacuum-Sealed Cmos Pressure Sensor (Article)
Subject: Solid State Sensors And Actuators
Author: A. V. Chavan      K. D. Wise     
page:      164 - 169
Stacked Amorphous Silicon Color Sensors (Article)
Subject: Solid State Sensors And Actuators
Author: D. Knipp      P. G. Herzog     
page:      170 - 176
Applications Of Blow-Up Theory To Thyristor Turn-On (Article)
Subject: Thyristor Controlled Series Compensator
Author: J. Paisana     
page:      177 - 178
Ultralow Leakage Characteristics Of Ultrathin Gate Oxides (~3 Nm) Prepared By Anodization Followed By High-Temperature Annealing (Article)
Subject: Ultralow Leakage , Characteristics , Oxide Thickness
Author: C. C. Ting     
page:      177 - 178
Lateral Thin-Film Schottky (Ltfs) Rectifier On Soi: A Device With Higher Than Plane Parallel Breakdown Voltage (Article)
Subject: Lateral Thin-Film Schottky (Ltfs)
Author: Y. Singh     
page:      181 - 183
The Low Frequency Noise In Reverse Biased Rectifier Diodes (Article)
Subject: Low Frequency Electrical Noise , Rectifier , Diodes
Author: O. Marinov     
page:      184 - 186
A Scalable Meander-Line Resistor Model For Silicon Rfics (Article)
Subject: Scalable Systems , Silicon Devices
Author: M.J. Deen     
page:      187 - 189
Microwave Performance And Modeling Of Inas/Aisb/Gasb Resonant Interband Tunneling Diodes (Article)
Subject: Compound Semiconductor Devices
Author: P. Fay     
page:      19 - 24
Compact Threshold-Voltage Model For Short-Channel Partially Depleted (Pd) Soi Dynamic-Threshold Mos (Dtmos) Devices (Article)
Subject: Threshold Voltage , Short Channel Effects , Dynamic
Author: J. B Kuo     
page:      190 - 195
Mosfet Subthreshold Compact Modeling With Effective Gae Overdrive (Article)
Subject: Mosfets , Subthreshold Dynamic Threshold Voltage Mos , Modeling
Author: K.W Lim      X Zhou     
page:      196 - 199
A Simple, High Performance Tfsoi Complementary Bicmos Technology For Low Power Wireless Applications (Article)
Subject: High Performance , Complementary Pass-Gate Logic , Bicmos
Author: M.J Kumar     
page:      200 - 201
The Psd Transfer Function (Article)
Subject: Psd Transfer Function
Author: M. De Bakkar      P. W. Verbeek     
page:      202 - 206
Two-Dimensional Quantum Effects In Nanoscale Mosfets (Article)
Subject: Compound Semiconductor Devices
Author: A. Pirovano     
page:      25 - 31
Breakdown Voltage And Reverse Recovery Characteristics Of Free-Standing Ganschottky Rectifiers (Article)
Subject: Compound Semiconductor Devices
Author: J. W. Johnson     
page:      32 - 36
Analysis Of Gate-Lag Phenomena In Recessed-Gate And Buried-Gate Gaas Mesfets (Article)
Subject: Compound Semiconductor Devices
Author: A. Wakabayashi     
page:      37 - 41
Formation Of Titanium Silicide On Narrow Gates Using Laser Thermal Processing (Article)
Subject: Materials Processing And Packaging
Author: Gita Dewan Verma      S Talwar     
page:      42 - 47
Temperature Behavior Of Visible And Infrared Electroluminescent Devices Fabricated On Erbium-Doped Gan (Article)
Subject: Optoelectronics, Displays And Imaging
Author: A. C Steckley      M. J. Garter     
page:      48 - 54
Clarification Of Floating-Body Effects On Drive Current And Short Channel Effects In Deep Sub-0o.25 Um Partially-Depleted Soi Mosfets (Article)
Subject: Silicon Devices
Author: T Matsumoto     
page:      55 - 60
Sub-100-Nm Vertical Mosfet With Threshold Voltage Adjustment (Article)
Subject: Silicon Devices
Author: K Mori     
page:      61 - 66
Arsenic/Phosphorus Ldd Optimization By Taking Advantage Of Phosphrus Transient Enhanced Diffusion For High Voltage Input/Output Cmos Devices (Article)
Subject: Silicon Devices
Author: C. C Wang     
page:      67 - 71
Novel Soi P-Channel Mosfets With Higher Strain In Si Channel Using Double Sige Heterostructures (Article)
Subject: Compound Semiconductor Devices
Author: T Mizuno      N Sugiyama      A Tezuka      S.-I Takagi     
page:      7 - 14
Accuracy Of Approximations In Mosfet Charge Models (Article)
Subject: Silicon Devices
Author: C. C. Mcandrew      J. J. Victory     
page:      72 - 81
A Method To Extract Mobility Degradation And Total Series Resistance Of Fully-Depleted Soi Mosfets (Article)
Subject: Silicon Devices
Author: F. J Garcia     
page:      82 - 88
Sub-50-Nm Physical Gate Length Cmos Technology And Behond Using Steep Halo (Article)
Subject: Silicon Devices
Author: H Wakabayashi     
page:      89 - 95
On The Performance Advantage Of Pd/Soi Cmos With Floating Bodies (Article)
Subject: Silicon Devices
Author: Jerry G Fossum     
page:      96 - 104